| Title: |
The 3838 Å photoluminescence line in 4H-SiC. |
| Authors: |
Henry, A.; Forsberg, U.; Janson, M. S.; Janzén, E. |
| Source: |
Journal of Applied Physics; 9/1/2003, Vol. 94 Issue 5, p2901, 6p, 1 Diagram, 7 Graphs |
| Subject Terms: |
PHOTOLUMINESCENCE; SILICON carbide; NITROGEN; SPECTRUM analysis; SEMICONDUCTOR doping |
| Abstract: |
We report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n[sup +]-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position depending on the nitrogen concentration. A similar band is observed for 6H material, displaced in energy position by the band-gap difference between the two polytypes. A sharp peak near 3838 Å in the 4H-SiC PL spectrum has a phonon structure containing localized modes. This recombination leading to this PL line is most likely associated with an isoelectronic complex defect. The present results allow a better understanding of the PL spectrum of a low-doped epilayer grown on a heavily doped substrate. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |