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Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025).

Title: Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025).
Authors: Ghomi, Sara; Martella, Christian; Lee, Yoonseok; Chang, Penny Hui‐Ping; Targa, Paolo; Serafini, Andrea; Codegoni, Davide; Massetti, Chiara; Gharedaghi, Sepideh; Lamperti, Alessio; Grazianetti, Carlo; Akinwande, Deji; Molle, Alessandro
Source: Advanced Science; 1/9/2025, Vol. 12 Issue 1, p1-1, 1p
Subject Terms: VAPOR-plating; LOW temperatures; SUBSTRATES (Materials science); GOLD; SIMPLICITY
Abstract: The article in Advanced Science discusses the use of nanoscaled elemental tellurium in memristor design, highlighting its simplicity in chemistry, structure, and synthesis. Researchers, including Christian Martella and Deji Akinwande, successfully synthesized nanoscaled tellurium through vapor transport deposition on gold substrates at a low temperature of 100 °C, ensuring compatibility with back-end-of-line processing. This innovative approach opens up possibilities for a wide range of applications due to the unique characteristics of 2D tellurium. [Extracted from the article]
: Copyright of Advanced Science is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Complementary Index