| Title: |
Doping Profile Meter for Semiconductor Structures. |
| Authors: |
Manyakhin, Fedor; Varlamov, Dmitry; Morketsova, Lyudmila; Skvortsov, Arkady; Nikolaev, Vladimir |
| Source: |
Measurement; Jan-Mar2026, Vol. 24 Issue 1, p40-49, 10p |
| Subject Terms: |
SEMICONDUCTORS; INDUSTRIAL contamination; MICROCONTROLLERS |
| Abstract: |
A measuring device designed to gauge the distribution of electrically charged impurities within strongly asymmetric p – n junctions, Schottky barriers, and metal – insulator – semiconductor structures, employs the capacitance – voltage method. This device is controlled by a personal computer through a microcontroller. The coordinates of the concentration profile points are determined through a simultaneous selection of signals proportional to the concentration and its spatial coordinate, achieved by the selective hardware separation of information frequencies from a polyharmonic voltage. This process occurs in a structure installed in the negative-feedback circuit of the operational amplifier. The entire profiling process takes 30 seconds. It boasts a depth resolution of 15 angstroms (equivalent to 3‒4 atomic layers of the crystal lattice) at an impurity concentration of 5 × 1017 cm−3, with a maximum measured concentration of 5 × 1018 cm−3. The dimensions of the measuring device are 180 × 120 × 50 mm. The study presents examples of its practical applications. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |