Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors.
| Title: | Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors. |
|---|---|
| Authors: | Carrad DJ; School of Physics, The University of New South Wales , Sydney NSW 2052, Australia.; Burke AM; Lyttleton RW; Joyce HJ; Tan HH; Jagadish C; Storm K; Linke H; Samuelson L; Micolich AP |
| Source: | Nano letters [Nano Lett] 2014 Jan 08; Vol. 14 (1), pp. 94-100. Date of Electronic Publication: 2013 Dec 18. |
| Publication Type: | Journal Article; Research Support, Non-U.S. Gov't |
| Language: | English |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: PubMed not MEDLINE |
| Imprint Name(s): | Original Publication: Washington, DC : American Chemical Society, c2001- |
| Abstract: | We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. |
| Entry Date(s): | Date Created: 20131217 Date Completed: 20140825 Latest Revision: 20200930 |
| Update Code: | 20260130 |
| DOI: | 10.1021/nl403299u |
| PMID: | 24329104 |
| Database: | MEDLINE |
Journal Article; Research Support, Non-U.S. Gov't