High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.
| Title: | High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties. |
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| Authors: | Yeom DY; 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Department of Chemistry, Sogang University, Seoul 121-742, Korea.; Jeon W; Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.; Tu ND; 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea.; Yeo SY; Interface Control Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.; Lee SS; 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Korea.; Sung BJ; Department of Chemistry, Sogang University, Seoul 121-742, Korea.; Chang H; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.; Lim JA; 1] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea [2] Interface Control Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.; Kim H; 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea. |
| Source: | Scientific reports [Sci Rep] 2015 May 05; Vol. 5, pp. 9817. Date of Electronic Publication: 2015 May 05. |
| Publication Type: | Journal Article; Research Support, Non-U.S. Gov't |
| Language: | English |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: PubMed not MEDLINE |
| Imprint Name(s): | Original Publication: London : Nature Publishing Group, copyright 2011- |
| Abstract: | For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment. |
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| Entry Date(s): | Date Created: 20150506 Date Completed: 20150804 Latest Revision: 20181113 |
| Update Code: | 20260130 |
| PubMed Central ID: | PMC4419459 |
| DOI: | 10.1038/srep09817 |
| PMID: | 25940534 |
| Database: | MEDLINE |
Journal Article; Research Support, Non-U.S. Gov't