| Title: |
Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires. |
| Authors: |
Noé, P.; Guignard, J.; Gentile, P.; Delamadeleine, E.; Calvo, V.; Ferret, P.; Dhalluin, F.; Baron, T. |
| Source: |
Journal of Applied Physics; 7/1/2007, Vol. 102 Issue 1, p016103, 3p, 2 Diagrams, 2 Graphs |
| Subject Terms: |
PHOTOLUMINESCENCE; SILICON oxide; NANOWIRES; SILICON; SCANNING electron microscopy; OPTOELECTRONIC devices |
| Abstract: |
The authors show an efficient room-temperature visible photoluminescence source obtained by combining silicon nanowires (SiNWs) and silicon oxide (SiO2) defect states. The SiNWs are synthesized by a Vapor-Liquid-Solid mechanism and then covered by SiO2 deposited by standard deposition techniques. SiNW samples have been observed by scanning electron microscopy. The photoluminescence spectra of SiO2/SiNWs samples exhibit a blue-green-light emission centered at 500 nm attributed to the carrier recombination at oxygen relative defects at the SiNWs/SiO2 interface and defect centers in the SiO2 layer. Such structures are very promising for optoelectronic devices in order to achieve an efficient silicon-based source under electrical injection. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |