Integrated synthesis and comprehensive characterization of TiO2/AgBi2S3 ternary thin films via SILAR method.
| Title: | Integrated synthesis and comprehensive characterization of TiO2/AgBi2S3 ternary thin films via SILAR method. |
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| Authors: | Padwal S; Science Department, Government Polytechnic Nashik, New Building Campus, Samangaon Road, Nashik Road, Nashik, 422101, Maharashtra, India.; Wagh R; Department of Physics, PSGVP Mandal's Arts Commerce & Science College, Shahada, Nandurbar, 425409, Maharashtra, India.; Thakare J; Principal Research Engineer, Electrochemical Process Development, Energy and Environmental Research Center, Grand Forks, ND, 58202-9018, USA.; Patil R; Department of Physics, PSGVP Mandal's Arts Commerce & Science College, Shahada, Nandurbar, 425409, Maharashtra, India. |
| Source: | Heliyon [Heliyon] 2023 Dec 02; Vol. 9 (12), pp. e23106. Date of Electronic Publication: 2023 Dec 02 (Print Publication: 2023). |
| Publication Type: | Journal Article |
| Language: | English |
| Journal Info: | Publisher: Elsevier Ltd Country of Publication: England NLM ID: 101672560 Publication Model: eCollection Cited Medium: Print ISSN: 2405-8440 (Print) Linking ISSN: 24058440 NLM ISO Abbreviation: Heliyon Subsets: PubMed not MEDLINE |
| Imprint Name(s): | Original Publication: London : Elsevier Ltd, [2015]- |
| Abstract: | AgBi2S3, a copious and innocuous ternary metal chalcogenide affiliated with the I-V-IV group of semiconductors, was synthesized. With an energy gap of 1.2eV, it closely matches the optimal 1.39eV for solar cell absorbers. Importantly, this chalcogenide exhibits a high absorption coefficient of 105 cm-1 at 600 nm. Using the successive ionic layer adsorption and reaction (SILAR) method; we deposited an AgBi2S3 thin film onto a titanium dioxide (TiO2) thin film. Characterization techniques encompassed XRD, SEM, EDXS, UV-Vis, EIS, and PEC performance analyses. The resulting TiO2/AgBi2S3 composite film ranged in thickness from 8 μm to 13 μm, with particle sizes spanning 20 nm-265 nm. Notably, the deposition of AgBi2S3 onto the TiO2 film caused depreciation in the TiO2 energy gap from 3.1eV to 1.7eV. Furthermore, it significantly enhanced the TiO2 film's absorbance across the visible and near-infrared regions. Intriguingly, the TiO2/AgBi2S3 composite film also exhibited discernible photoelectrochemical behavior.; (© 2023 The Authors. Published by Elsevier Ltd.) |
| Competing Interests: | The authors have no conflict of interest to declare. Also, the authors have no known competing financial interests or personal relationship that could have appeared to influence the work reported in this paper. |
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| Contributed Indexing: | Keywords: AgBi2S3; Electrochemical impedance spectroscopy; Optical energy band gap; Photoelectrochemical; SILAR; Ternary metal chalcogenide; UV visible spectroscopy |
| Entry Date(s): | Date Created: 20231227 Latest Revision: 20231228 |
| Update Code: | 20260130 |
| PubMed Central ID: | PMC10750032 |
| DOI: | 10.1016/j.heliyon.2023.e23106 |
| PMID: | 38149199 |
| Database: | MEDLINE |
Journal Article