| Title: |
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology |
| Authors: |
Iacobucci, G.; Cardarelli, R.; Débieux, S.; Di Bello, F. A.; Favre, Y.; Hayakawa, D.; Kaynak, M.; Nessi, M.; Paolozzi, L.; Rücker, H.; Sultan, DMS; Valerio, P. |
| Publication Year: |
2019 |
| Collection: |
Physics (Other) |
| Subject Terms: |
Physics - Instrumentation and Detectors |
| Description: |
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. |
| Document Type: |
Working Paper |
| DOI: |
10.1088/1748-0221/14/11/P11008 |
| Access URL: |
http://arxiv.org/abs/1908.09709 |
| Accession Number: |
edsarx.1908.09709 |
| Database: |
arXiv |