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Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors

Title: Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Authors: Bouhouche, Menel; Adebabay Belie, Ayenew; Mansouri, Yasser; Sagnes, Bruno; Boch, Jérôme; Maraine, Tadec; Hoffmann, Alain; Lakhdarac, Maya; Chevalier, Pascal; Gloria, Daniel; Pascal, Fabien
Contributors: University of Oum El Bouaghi; Institut d’Electronique et des Systèmes (IES); Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE); Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Fiabilité et Systèmes en Environnements Contraints (FSEC); Université de Constantine; Radiations et composants (RADIAC); STMicroelectronics; Université de Bordeaux, ADERA
Source: ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025 ; https://hal.science/hal-05369208 ; ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France
Publisher Information: CCSD
Publication Year: 2025
Collection: Université de Montpellier: HAL
Subject Terms: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; [SPI.TRON]Engineering Sciences [physics]/Electronics
Subject Geographic: Bordeaux; France
Description: 70 ; International audience ; Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Document Type: conference object
Language: French
Availability: https://hal.science/hal-05369208; https://hal.science/hal-05369208v1/document; https://hal.science/hal-05369208v1/file/F_Pascal_New_Abstract_70_ESREF_2025_IES.pdf
Rights: info:eu-repo/semantics/OpenAccess
Accession Number: edsbas.113E7831
Database: BASE