| Title: |
AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode |
| Authors: |
Dimitrocenko, L.; Grube, J.; Kulis, P.; Marcins, G.; Polyakov, B.; Sarakovskis, A.; Springis, M.; Tale, I. |
| Source: |
Latvian Journal of Physics and Technical Sciences ; volume 45, issue 4, page 25-32 ; ISSN 0868-8257 |
| Publisher Information: |
Walter de Gruyter GmbH |
| Publication Year: |
2008 |
| Description: |
AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode A 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and Al x Ga 1-x N monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, an n -doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier. |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| DOI: |
10.2478/v10047-008-0017-3 |
| Availability: |
https://doi.org/10.2478/v10047-008-0017-3; http://content.sciendo.com/view/journals/lpts/45/4/article-p25.xml; https://www.degruyter.com/view/j/lpts.2008.45.issue-4/v10047-008-0017-3/v10047-008-0017-3.pdf |
| Accession Number: |
edsbas.123015A |
| Database: |
BASE |