| Title: |
Engineering porous electroactive thin films by magnetron sputtering on nanorough substrates |
| Authors: |
Vigolo, Brigitte; Haye, Emile; Muller, Jérôme; Moskovkin, Pavel; Lucas, Stéphane; Ibupoto, Zafar Hussain; Tahira, Aneela; Aftab, Umair; Benrazzouq, Salah-Eddine; Pavia, Mauricio; Garcia-Wong, Alexis Carlos; Pilloud, David; Migot, Sylvie; Ghanbaja, Jaafar; Emo, Mélanie; Pierson, Jean-François; Mohamed, Abdul Rahman; Besnard, Aurélien; Watiez, Noé; Achour, Amine; Douard, Camille; Brousse, Thierry; Vizireanu, Sorin; Dinescu, Gheorghe |
| Contributors: |
Institut Jean Lamour (IJL); Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS); Innovative Coating Solutions (ICS); Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST); Université de Technologie de Belfort-Montbeliard (UTBM)-SUPMICROTECH - Ecole Nationale Supérieure de Mécanique et des Microtechniques (SUPMICROTECH - ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université Marie et Louis Pasteur (UMLP); Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC); Laboratoire Bourguignon des Matériaux et Procédés (LABOMAP); Arts et Métiers Sciences et Technologies; National Institute for Laser, Plasma and Radiation Physics (INFLPR) |
| Source: |
European Materials Research Society Spring meeting ; https://hal.science/hal-05669023 ; European Materials Research Society Spring meeting, May 2026, Strasbourg, France |
| Publisher Information: |
CCSD |
| Publication Year: |
2026 |
| Collection: |
Université de Lorraine: HAL |
| Subject Terms: |
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph]; [SPI.MAT]Engineering Sciences [physics]/Materials; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Subject Geographic: |
Strasbourg; France |
| Description: |
International audience ; Magnetron sputtering (MS) is a versatile and scalable thin-film deposition technique that enablesprecise control over key material parameters such as crystalline phase, stoichiometry and phasecomposition. While conventional MS is widely used to fabricate dense, non-porous coatings on flatsubstrates, its potential for producing porous electrochemically active materials when deposited onnanorough substrates remains largely unexplored. In this work, we demonstrate that using nanoroughcarbon substrates dramatically alters the growth mechanism of sputtered metal nitride thin films,enabling the formation of highly porous microstructures with enhanced surface area [1].Using nickel nitride and chromium nitride as model systems, we investigate thin-film growth oncarbon nanotubes and carbon nanosheets. The intrinsic nanometric roughness of these substratesinduces strong shadowing effects and non-competitive growth of incoming species, leading to open,quasi-fractal thin films that strongly contrast with the dense layers obtained on conventional flatsubstrates such as silicon or nickel. These experimental observations are supported by Monte Carlosimulations, which provide a detailed understanding of the underlying growth mechanisms. Therobustness of this phenomenon across different nanorough substrate/thin-film systems suggests auniversal and straightforward strategy to promote porosity in sputtered thin films using conventionalMS processes. This bottom-up surface engineering approach offers a solid-state, solvent-freealternative to liquid-based synthesis routes and opens new opportunities for designing high-performance nanostructured materials. The resulting metal nitride/carbon nanomaterial hybridsexhibit significantly improved electrochemical performance for energy conversion and storageapplications. |
| Document Type: |
conference object |
| Language: |
English |
| Availability: |
https://hal.science/hal-05669023; https://hal.science/hal-05669023v1/document; https://hal.science/hal-05669023v1/file/7b3e8f68-54bc-4d62-99c0-606972b3d8f3-author.pdf |
| Rights: |
https://about.hal.science/hal-authorisation-v1/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.13F7D32F |
| Database: |
BASE |