| Title: |
Complementary integration of organic electrochemical transistors for front-end amplifier circuits of flexible neural implants |
| Authors: |
Uguz, Ilke; Ohayon, David; Yilmaz, Sinan; Griggs, Sophie; Sheelamanthula, Rajendar; Fabbri, Jason D.; McCulloch, Iain; Inal, Sahika; Shepard, Kenneth L. |
| Contributors: |
Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.; Bioscience; Bioscience Program; Biological, Environmental Sciences and Engineering; Biological and Environmental Science and Engineering (BESE) Division; Advanced Membranes and Porous Materials Center; Advanced Membranes and Porous Materials Research Center; KAUST Solar Center; KAUST Solar Center (KSC); Physical Sciences and Engineering; Physical Science and Engineering (PSE) Division; Chemistry; Chemical Science Program; Bioengineering; Bioengineering Program; Columbia University, New York, NY, USA.; Institute of Functional Intelligent Materials (IFIM), National University of Singapore, 117544, Singapore.; Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford OX1 3TA, UK. |
| Publisher Information: |
American Association for the Advancement of Science (AAAS) |
| Publication Year: |
2024 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
The ability to amplify, translate, and process small ionic potential fluctuations of neural processes directly at the recording site is essential to improve the performance of neural implants. Organic front-end analog electronics are ideal for this application, allowing for minimally invasive amplifiers owing to their tissue-like mechanical properties. Here, we demonstrate fully organic complementary circuits by pairing depletion- and enhancement-mode p- and n-type organic electrochemical transistors (OECTs). With precise geometry tuning and a vertical device architecture, we achieve overlapping output characteristics and integrate them into amplifiers with single neuronal dimensions (20 micrometers). Amplifiers with combined p- and n-OECTs result in voltage-to-voltage amplification with a gain of >30 decibels. We also leverage depletion and enhancement-mode p-OECTs with matching characteristics to demonstrate a differential recording capability with high common mode rejection rate (>60 decibels). Integrating OECT-based front-end amplifiers into a flexible shank form factor enables single-neuron recording in the mouse cortex with on-site filtering and amplification. ; his work was performed in part at the columbia nano initiative and part at the cUnY Advanced Science Research center nanofabrication Facility. We also extend our acknowledgment to W. hunnicutt and the carleton Strength of Materials laboratory for assistance in the mechanical characterization of flexible shanks ; this work was supported by the following grants and contracts: defense Advanced Research Projects Agency (dARPA) under contract n66001- 17- c- 4002, national institutes of health under grants U01nS099726 and U01nS099697, and King Abdullah University of Science and technology Research Funding under award no. ORA- 2021- cRG10- 4650 |
| Document Type: |
article in journal/newspaper |
| File Description: |
application/pdf |
| Language: |
unknown |
| ISSN: |
2375-2548 |
| Relation: |
12; Science Advances; http://hdl.handle.net/10754/697798; 10 |
| DOI: |
10.1126/sciadv.adi9710 |
| Availability: |
http://hdl.handle.net/10754/697798; https://doi.org/10.1126/sciadv.adi9710 |
| Rights: |
Archived with thanks to Science Advances under a Creative Commons license, details at: https://creativecommons.org/licenses/by-nc/4.0/ ; https://creativecommons.org/licenses/by-nc/4.0/ |
| Accession Number: |
edsbas.148546B5 |
| Database: |
BASE |