| Title: |
Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide-Bandgap Single-Crystalline AlN Thin Films |
| Authors: |
Kim, Nam-In; Yarali, Miad; Moradnia, Mina; Aqib, Muhammad; Liao, Che-Hao; AlQatari, Feras S.; Nong, Mingtao; Li, Xiaohang; Ryou, Jae-Hyun |
| Contributors: |
Material Science and Engineering Program; Physical Science and Engineering (PSE) Division; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division; Electrical and Computer Engineering Program; Department of Mechanical Engineering University of Houston Houston TX 77204-2004 USA; Materials Science and Engineering Program University of Houston Houston TX 77204 USA; Advanced Manufacturing Institute (AMI) University of Houston Houston TX 77204 USA; Texas Center for Superconductivity at UH (TcSUH) University of Houston Houston TX 77204 USA; Department of Electrical and Computer Engineering University of Houston Houston TX 77494 USA |
| Publisher Information: |
Wiley |
| Publication Year: |
2022 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
Extreme environments are often faced in energy, transportation, aerospace, and defense applications and pose a technical challenge in sensing. Piezoelectric sensor based on single-crystalline AlN transducers is developed to address this challenge. The pressure sensor shows high sensitivities of 0.4–0.5 mV per psi up to 900 °C and output voltages from 73.3 to 143.2 mV for input gas pressure range of 50 to 200 psi at 800 °C. The sensitivity and output voltage also exhibit the dependence on temperature due to two origins. A decrease in elastic modulus (Young's modulus) of the diaphragm slightly enhances the sensitivity and the generation of free carriers degrades the voltage output beyond 800 °C, which also matches with theoretical estimation. The performance characteristics of the sensor are also compared with polycrystalline AlN and single-crystalline GaN thin films to investigate the importance of single crystallinity on the piezoelectric effect and bandgap energy-related free carrier generation in piezoelectric devices for high-temperature operation. The operation of the sensor at 900 °C is amongst the highest for pressure sensors and the inherent properties of AlN including chemical and thermal stability and radiation resistance indicate this approach offers a new solution for sensing in extreme environments. ; The work at the University of Houston was supported by King Abdullah University of Science and Technology (KAUST), Saudi Arabia (Contract No. OSR-2017-CRG6-3437.02). J.-H.R. also acknowledged partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH) and Advanced Manufacturing Institute (AMI). |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| ISSN: |
1616-301X; 1616-3028 |
| Relation: |
Kim, N., Yarali, M., Moradnia, M., Aqib, M., Liao, C., AlQatari, F., Nong, M., Li, X., & Ryou, J. (2022). Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide-Bandgap Single-Crystalline AlN Thin Films. Advanced Functional Materials, 2212538. Portico. https://doi.org/10.1002/adfm.202212538; Advanced Functional Materials; 2212538; http://hdl.handle.net/10754/686668 |
| DOI: |
10.1002/adfm.202212538 |
| Availability: |
http://hdl.handle.net/10754/686668; https://doi.org/10.1002/adfm.202212538 |
| Rights: |
This is an accepted manuscript version of a paper before final publisher editing and formatting. Archived with thanks to Wiley. The version of record is available from Advanced Functional Materials. ; 2023-12-25 |
| Accession Number: |
edsbas.17037E98 |
| Database: |
BASE |