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Defect‐Free Nanowelding of Bilayer SnSe Nanoplates

Title: Defect‐Free Nanowelding of Bilayer SnSe Nanoplates
Authors: Ji, Jing‐Rong; Villanova, John W.; Barraza‐Lopez, Salvador; Parkin, Stuart S. P.; Chang, Kai
Contributors: National Natural Science Foundation of China; Deutsche Forschungsgemeinschaft; U.S. Department of Energy; National Science Foundation; Arkansas Economic Development Commission
Source: Advanced Materials ; ISSN 0935-9648 1521-4095
Publisher Information: Wiley
Publication Year: 2024
Collection: Wiley Online Library (Open Access Articles via Crossref)
Description: Nanowelding is a bottom‐up technique to create custom‐designed nanostructures and devices beyond the precision of lithographic methods. Here, a new technique is reported based on anisotropic lubricity at the van der Waals interface between monolayer and bilayer SnSe nanoplates and a graphene substrate to achieve precise control of the crystal orientation and the interface during the welding process. As‐grown SnSe monolayer and bilayer nanoplates are commensurate with graphene's armchair direction but lack commensuration along graphene's zigzag direction, resulting in a reduced friction along that direction and a rail‐like, 1D movement that permits joining nanoplates with high precision. This way, molecular beam epitaxially grown SnSe nanoplates of lateral sizes 30–100 nm are manipulated by the tip of a scanning tunneling microscope at room temperature. In situ annealing is applied afterward to weld contacting nanoplates without atomic defects at the interface. This technique can be generalized to any van der Waals interfaces with anisotropic lubricity and is highly promising for the construction of complex quantum devices, such as field effect transistors, quantum interference devices, lateral tunneling junctions, and solid‐state qubits.
Document Type: article in journal/newspaper
Language: English
DOI: 10.1002/adma.202312199
Availability: https://doi.org/10.1002/adma.202312199; https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202312199
Rights: http://creativecommons.org/licenses/by/4.0/
Accession Number: edsbas.18D832B4
Database: BASE