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Polarity modulation in compositionally tunable Bi2O2Se thin films

Title: Polarity modulation in compositionally tunable Bi2O2Se thin films
Authors: Yong-Jyun Wang; Jian-Wei Zhang; Jianchu Chen; Haonan Wang; Shiuan Wu; Chang-Yu Lo; Jhe-Ting Hong; Cheng-Yang Syu; Li-Syuan Hao; I-Sung Chen; Yuan-Chih Chang; Zhenzhong Yang; Rong Huang; Chun-Liang Lin; Po-Wen Chiu; Yu-Lun Chueh; Yi-Cheng Chen; Chao-Hui Yeh; Ying-Hao Chu
Source: Nature Communications, Vol 16, Iss 1, Pp 1-9 (2025)
Publisher Information: Nature Portfolio
Publication Year: 2025
Collection: Directory of Open Access Journals: DOAJ Articles
Subject Terms: Science
Description: Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~106 and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.
Document Type: article in journal/newspaper
Language: English
Relation: https://doi.org/10.1038/s41467-025-58198-3; https://doaj.org/toc/2041-1723; https://doaj.org/article/6325c4fda99b4ca980fccbc4b4ad86a7
DOI: 10.1038/s41467-025-58198-3
Availability: https://doi.org/10.1038/s41467-025-58198-3; https://doaj.org/article/6325c4fda99b4ca980fccbc4b4ad86a7
Accession Number: edsbas.1ACBF657
Database: BASE