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Enhanced photoresponse of a self-powered gallium nitride photodetector via sequentially-deposited gold nanoparticles for sustainable optoelectronics

Title: Enhanced photoresponse of a self-powered gallium nitride photodetector via sequentially-deposited gold nanoparticles for sustainable optoelectronics
Authors: TEKER, KAŞİF
Contributors: Teker T. U., TEKER K.
Publication Year: 2023
Subject Terms: Bilgi Sistemleri; Haberleşme ve Kontrol Mühendisliği; Sinyal İşleme; Fizik; Yoğun Madde 1:Yapısal; Mekanik ve Termal Özellikler; Temel Bilimler; Mühendislik ve Teknoloji; Information Systems; Communication and Control Engineering; Signal Processing; Physics; Condensed Matter 1: Structural; Mechanical and Thermal Properties; Natural Sciences; Engineering and Technology; Mühendislik; Bilişim ve Teknoloji (ENG); Temel Bilimler (SCI); Malzeme Bilimi; MÜHENDİSLİK; ELEKTRİK VE ELEKTRONİK; MALZEME BİLİMİ; ÇOKDİSİPLİNLİ; FİZİK; YOĞUN MADDE; Engineering; Computing & Technology (ENG); Natural Sciences (SCI); MATERIALS SCIENCE
Description: © 2023, The Minerals, Metals & Materials Society.It is becoming crucial to design/fabricate eco-friendly, sustainable electronic and photonic devices to minimize the carbon footprint for future systems. In this study, we have demonstrated a steady photoresponse enhancement of the self-powered GaN ultraviolet photodetector (GaN-UVPD) via sequentially deposited gold nanoparticles (Au NPs) under 254, 302, and 365 nm UV light exposure. The AuNP-deposited GaN-UVPD exhibited excellent responsivity of 0.65 A/W and detectivity of 6.51 × 1012 cm.Hz1/2 W−1 under 302 nm UV light without any external power. Moreover, the sensitivity of the device increased from 1.98 × 106% to 3.32 × 106% following Au nanoparticle deposition. Additionally, the plausible mechanisms for the self-powered and Au nanoparticle-induced photoresponse enhancement have been discussed. In brief, the high-performance photoresponsivity of our self-powered GaN-UVPD could find many useful applications in sustainable energy and eco-friendly optoelectronic devices.
Document Type: article in journal/newspaper
File Description: application/pdf
Language: English
Relation: Journal of Electronic Materials; https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85146234903&origin=inward; https://hdl.handle.net/11424/285948
DOI: 10.1007/s11664-022-10176-x
Availability: https://hdl.handle.net/11424/285948; https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85146234903&origin=inward; https://doi.org/10.1007/s11664-022-10176-x
Rights: info:eu-repo/semantics/openAccess
Accession Number: edsbas.1AD82AF
Database: BASE