| Title: |
Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors |
| Authors: |
阮東見; Chien, ND |
| Contributors: |
科技學院:電機工程學系; Shih, CH (Shih, Chun-Hsing); Chien, ND ( Nguyen Dang Chien) |
| Publisher Information: |
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV |
| Publication Year: |
2014 |
| Collection: |
National Chi Nan University (NCNU) Repository |
| Subject Terms: |
FIELD-EFFECT TRANSISTORS; VOLTAGE; INAS |
| Description: |
Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors. (C) 2014 AIP Publishing LLC. ; SCI |
| Document Type: |
article in journal/newspaper |
| File Description: |
99 bytes; text/html |
| Language: |
English |
| Relation: |
JOURNAL OF APPLIED PHYSICS,115(4): - .28-Jan.2014; http://ir.ncnu.edu.tw:8080/handle/310010000/13240; http://ir.ncnu.edu.tw:8080/bitstream/310010000/13240/1/index.html |
| Availability: |
http://ir.ncnu.edu.tw:8080/handle/310010000/13240; http://ir.ncnu.edu.tw:8080/bitstream/310010000/13240/1/index.html |
| Accession Number: |
edsbas.211B751A |
| Database: |
BASE |