| Title: |
Optical Properties of Complex Anion Vacancy Centres and Photo-Excited Electronic Processes in Anion Defective Alpha-Al2O3 |
| Authors: |
Tale, I.; Piters, T.M.; Barboza-Flores, M.; Perez-Salas, R.; Aceves, R.; Springis, M. |
| Publisher Information: |
Oxford University Press |
| Publication Year: |
1996 |
| Collection: |
HighWire Press (Stanford University) |
| Subject Terms: |
Article |
| Description: |
A comparative investigation of the optical characteristics and nature of electronic processes in a-Al 2 O 3 crystals was carried out for thermal treatments involving a quenching or an annealing procedure. The formation of a defect with stimulation band at 4.11 eV and two luminescence bands at 2.5 eV and 3.82 eV during annealing has been observed. Results support the F 2 centre as a probable model for this defect. Excitation in the absorption band of the F 2 centre at 4.11 eV at RT results both in intrinsic luminescence at 3.82 eV and 2.5 eV as well as in photo-ionisation of the F 2 centre. The F 2 centre takes part in the phototransfer of electrons and acts as a recombination centre in TSL. The presence of F 2 centres in crystals may considerably affect the dosimetric characteristics of the anion defective a-Al 2 O 3 . |
| Document Type: |
text |
| File Description: |
text/html |
| Language: |
English |
| Relation: |
http://rpd.oxfordjournals.org/cgi/content/short/65/1-4/235; http://dx.doi.org/10.1093/oxfordjournals.rpd.a031630 |
| DOI: |
10.1093/oxfordjournals.rpd.a031630 |
| Availability: |
http://rpd.oxfordjournals.org/cgi/content/short/65/1-4/235; https://doi.org/10.1093/oxfordjournals.rpd.a031630 |
| Rights: |
Copyright (C) 1996, Nuclear Technology Publishing |
| Accession Number: |
edsbas.27CCDD68 |
| Database: |
BASE |