| Title: |
Unlocking high-performance Si RF platforms with SiGe HBT and RFSOI switch technologies |
| Authors: |
Fache, Thibaud; Bordignon, Thomas; Perrose, Martin; Lucci, Luca; Gloria, Daniel; Adami, Obaid-Allah; Monsieur, Frédéric; Gouraud, Pascal; Kerdiles, Sébastien; Darras, François-Xavier; Acosta Alba, Pablo; Grégoire, Magali; Estellon, Adrien; Morris-Anak, Franco; Boughaleb, Sofia; Prouvee, Jérôme; Richard, Olivier; Guitard, Nicolas; Mohamad, Blend; Pavlovsky, Arthur; Ribotta, Mickael; Lachal, Laurent; Garros, Xavier; Chevalier, Pascal; Batude, Perrine |
| Contributors: |
Département Composants Silicium (DCOS); Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI); Direction de Recherche Technologique (CEA) (DRT (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA); STMicroelectronics; Département Systèmes (DSYS); Département Plate-Forme Technologique (DPFT) |
| Source: |
IEDM 2025 - 2025 IEEE International Electron Devices Meeting ; https://cea.hal.science/cea-05506196 ; IEDM 2025 - 2025 IEEE International Electron Devices Meeting, Dec 2025, San Francisco, United States. ⟨10.1109/IEDM50572.2025.11353843⟩ ; https://ieeexplore.ieee.org/document/11353843 |
| Publisher Information: |
CCSD |
| Publication Year: |
2025 |
| Collection: |
HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives) |
| Subject Terms: |
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Subject Geographic: |
San Francisco; United States |
| Description: |
International audience ; This work demonstrates key solutions for the ultimate cointegration of SiGe HBT, PDSOI switches and high-quality passives with 3D sequential integration. A Local Trap Rich (LTR) with RF isolation comparable to the state of the-art TR substrate, and a bulk SiGe HBT withstanding the top tier thermal budget are shown. A high-performance RFSOI switch processed at 600°C featuring RON×COFF=96fs & RFVmax=2.7V is also demonstrated, which is a major breakthrough. Together, these results pave the way towards a fully monolithic Silicon Front-End Module (FEM) for advanced efficient and cost-effective RF systems. |
| Document Type: |
conference object |
| Language: |
English |
| DOI: |
10.1109/IEDM50572.2025.11353843 |
| Availability: |
https://cea.hal.science/cea-05506196; https://cea.hal.science/cea-05506196v1/document; https://cea.hal.science/cea-05506196v1/file/IEDM%20B55.pdf; https://doi.org/10.1109/IEDM50572.2025.11353843 |
| Rights: |
https://about.hal.science/hal-authorisation-v1/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.29AE7E1 |
| Database: |
BASE |