| Title: |
Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method |
| Authors: |
Key, Daryl; Jordan, Benjamin; Letts, Ed; Hashimoto, Tadao |
| Contributors: |
Advanced Research Projects Agency-Energy; Office of Energy Efficiency and Renewable Energy; Office of Naval Research |
| Source: |
Japanese Journal of Applied Physics ; volume 61, issue 3, page 030903 ; ISSN 0021-4922 1347-4065 |
| Publisher Information: |
IOP Publishing |
| Publication Year: |
2022 |
| Description: |
X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm −2 to between 2 × 10 5 and 5 × 10 5 cm −2 , an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance. |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| DOI: |
10.35848/1347-4065/ac5095 |
| DOI: |
10.35848/1347-4065/ac5095/pdf |
| Availability: |
https://doi.org/10.35848/1347-4065/ac5095; https://iopscience.iop.org/article/10.35848/1347-4065/ac5095; https://iopscience.iop.org/article/10.35848/1347-4065/ac5095/pdf |
| Rights: |
https://publishingsupport.iopscience.iop.org/iop-standard/v1 ; https://iopscience.iop.org/info/page/text-and-data-mining |
| Accession Number: |
edsbas.2C38B7FB |
| Database: |
BASE |