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Mechanism of generation of nonequilibrium point defects of the crystalline lattice in the region of quantum wells of light-emitting-diode structures in the operating mode

Title: Mechanism of generation of nonequilibrium point defects of the crystalline lattice in the region of quantum wells of light-emitting-diode structures in the operating mode
Authors: Manyakhin, Fedor I; Morketsova, Lyudmila O; Skvortsov, Arkady A; Nikolaev, Vladimir K; Skvortsova, Anna A
Contributors: Ministry of Education and Science
Source: Semiconductor Science and Technology ; volume 41, issue 1, page 015015 ; ISSN 0268-1242 1361-6641
Publisher Information: IOP Publishing
Publication Year: 2026
Description: The analysis of the mechanism underlying the formation of the current–voltage characteristic in light-emitting diode structures with multiple quantum wells, along with the solution of the thermodynamic potential equation of the crystalline lattice, has revealed the mechanism responsible for the formation and accumulation of nonequilibrium Frenkel-type point defects in the quantum well (QW) region. This mechanism operates alongside other potential mechanisms associated with diffusion-stimulated complex rearrangement, the influence of piezoelectric fields, and mechanical stresses. This study demonstrates that according to this mechanism point defects are generated as a result of interactions between hot charge carriers, injected into the QW region, and the atoms of the crystalline lattice. The heating of charge carriers in the QW region occurs due to the electric field created by the charges of excess carriers within the QWs. An equation is presented for calculating the concentration of point defects as a function of operating time and forward current density.
Document Type: article in journal/newspaper
Language: unknown
DOI: 10.1088/1361-6641/ae2bf9
DOI: 10.1088/1361-6641/ae2bf9/pdf
Availability: https://doi.org/10.1088/1361-6641/ae2bf9; https://iopscience.iop.org/article/10.1088/1361-6641/ae2bf9; https://iopscience.iop.org/article/10.1088/1361-6641/ae2bf9/pdf
Rights: https://publishingsupport.iopscience.iop.org/iop-standard/v1 ; https://iopscience.iop.org/info/page/text-and-data-mining
Accession Number: edsbas.3063836F
Database: BASE