| Title: |
Spin Injection and Relaxation in p -Doped ( In , Ga ) As / Ga As Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field |
| Authors: |
Giba, Alaa, E; Gao, Xue; Stoffel, Mathieu; Devaux, Xavier; Xu, Bo; Marie, Xavier; Renucci, Pierre; Jaffrès, Henri; George, Jean-Marie; Cong, Guangwei; Wang, Zhanguo; Rinnert, Hervé; Lu, Yuan |
| Contributors: |
Institut Jean Lamour (IJL); Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS); Key Laboratory of Semiconductor Materials Science (LSMS); Institute of semiconductors Chinese Academy of Sciences - Beijing (IOS); Chinese Academy of Sciences Beijing (CAS)-Chinese Academy of Sciences Beijing (CAS); Laboratoire de physique et chimie des nano-objets (LPCNO); Institut National des Sciences Appliquées - Toulouse (INSA Toulouse); Institut National des Sciences Appliquées (INSA)-Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut National des Sciences Appliquées (INSA)-Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut de Chimie de Toulouse (ICT); Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3); Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP); Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3); Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP); Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC); Université Toulouse III - Paul Sabatier (UT3); Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Communauté d'universités et établissements de Toulouse (Comue de Toulouse)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS); Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales); THALES France -Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS); National Institute of Advanced Industrial Science and Technology (AIST); ANR-18-CE24-0017,FEOrgSpin,Contrôle ferroélectrique de la spinterface organique/ferromagnétique(2018); ANR-19-CE24-0005,SIZMO2D,Injection/detection de spin à champ magnétique nul dans des dispositifs SpinOptroniques à base de Semiconducteurs 2D(2019) |
| Source: |
ISSN: 2331-7019 ; Physical Review Applied ; https://hal.science/hal-02999545 ; Physical Review Applied, 2020, 14 (3), ⟨10.1103/PhysRevApplied.14.034017⟩. |
| Publisher Information: |
CCSD; American Physical Society |
| Publication Year: |
2020 |
| Collection: |
Université Toulouse III - Paul Sabatier: HAL-UPS |
| Subject Terms: |
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] |
| Description: |
International audience ; We report on efficient spin injection in p-doped (In, Ga)As/GaAs quantum-dot (QD) spin light-emitting diodes (spin LEDs) under zero applied magnetic field. A high degree of electroluminescence circular polarization (P c) ∼19% is measured in remanence up to 100 K. This result is obtained thanks to the combination of a perpendicularly magnetized Co-Fe-B/MgO spin injector allowing efficient spin injection and an appropriate p-doped (In, Ga)As/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we evidence a two-step spin-relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias-dependent P c. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of P c reflects the temperature-induced modification of the QD doping, together with the variation of the ratio between the charge-carrier lifetime and the spin-relaxation time inside the QDs. The understanding of these spin-relaxation mechanisms is essential to improve the performance of spin LEDs for future spin optoelectronic applications at room temperature under zero applied magnetic field. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1103/PhysRevApplied.14.034017 |
| Availability: |
https://hal.science/hal-02999545; https://hal.science/hal-02999545v1/document; https://hal.science/hal-02999545v1/file/PRA2020_spin%20injection%20and%20relaxation%20in%20QD%20spin%20LED_PhysRevApplied.14.034017.pdf; https://doi.org/10.1103/PhysRevApplied.14.034017 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.3066B76F |
| Database: |
BASE |