| Title: |
Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications |
| Authors: |
Cuniot-Ponsard, Mireille; Saraswati, Irma; Ko, S.-M.; Halbwax, Mathieu; Cho, Y.-H.; Poespawati, N.-R.; Dogheche, El Hadj |
| Contributors: |
Laboratoire Charles Fabry / Manolia; Laboratoire Charles Fabry (LCF); Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS); Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Universitas Indonesia (UI); Department of Physics and KI for the Nano-Century; Korea Advanced Institute of Science and Technology (KAIST); Optoélectronique - IEMN (OPTO - IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE) |
| Source: |
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond ; https://hal.science/hal-00961405 ; European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France |
| Publisher Information: |
CCSD |
| Publication Year: |
2014 |
| Collection: |
Université Polytechnique Hauts-de-France: HAL |
| Subject Terms: |
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] |
| Subject Geographic: |
Lille; France |
| Description: |
International audience ; In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN are analyzed using TEM and the influence of threading dislocations density is discussed. Optical properties are investigated using a prism coupling [2]. Electrooptic measurements are performed using an original technique [3]. A semi-transparent gold electrode is deposited on top of GaN layer and an alternating voltage is applied between top and bottom electrodes. The electro-optic, converse piezoelectric, and electro-absorptive coefficients are simultaneously determined from the measurement of the electric field induced variation ΔR(θ) in the reflectivity of the Au/GaN/buffer/Si stack versus incident angle. The method also enables to determine the GaN layer polarity. The results obtained for a Ga-face [0001] GaN layer when using a modulation frequency of 230 Hz are for the electro-optic coefficients r13 = +1 pm/V, r33 = +1.60 pm/V at 633 nm, and for the transverse piezoelectric coefficient d33 = +4.59 pm/V. The value measured for the electro-absorptive variation is Δko/ΔE = +0.77 pm/V. The electro-optic coefficients for GaN /Si and the electro-absorptive coefficient are measured for the first time. The converse piezoelectric value agrees with values previously reported. |
| Document Type: |
conference object |
| Language: |
English |
| Availability: |
https://hal.science/hal-00961405; https://hal.science/hal-00961405v1/document; https://hal.science/hal-00961405v1/file/00964286.pdf |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.34C2BF1 |
| Database: |
BASE |