Enhanced Light Emission in MoSe 2 –WSe 2 Lateral Heterostructures in the Electron–Hole Plasma Regime
| Title: | Enhanced Light Emission in MoSe 2 –WSe 2 Lateral Heterostructures in the Electron–Hole Plasma Regime |
|---|---|
| Authors: | Frederico B. Sousa; Bárbara A. L. Ferreira; Suman Kumar Chakraborty; Luiz C. Carvalho; Alisson R. Cadore; Biswajeet Nayak; Purbasha Ray; Simone S. Alexandre; Prasana K. Sahoo; Ricardo W. Nunes; Leandro M. Malard |
| Publication Year: | 2025 |
| Collection: | Erasmus University Rotterdam (EUR): Figshare |
| Subject Terms: | Biophysics; Medicine; Ecology; Infectious Diseases; Physical Sciences not elsewhere classified; transition metal dichalcogenide; theoretical results provide; room temperature due; hole wave functions; high excitation densities; enhanced light emission; ab initio |
| Description: | Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors exhibit interesting many-body effects even above room temperature due to their strong electron–hole interactions. For instance, low excitation densities lead to the well investigated exciton formation in these 2D TMDs and their heterostructures. The confinement of the moiré excitons and the delocalization of the interlayer excitons are among the novel excitonic phenomena presented by TMD-based heterostructures. However, the high excitation density responses of these 2D semiconductors and their heterostructures still lack solid understanding. In this work, we investigate the electron–hole plasma photoluminescence generated by high excitation densities in 2D MoSe 2 –WSe 2 lateral heterostructures. Photoluminescence mapping and spectroscopy measurements at high pumping regimes reveal an enhanced light emission at the lateral heterojunctions. Ab initio calculations for a MoSe 2 –WSe 2 lateral heterostructure with an alloyed interface of approximately the size of the heterojunctions of the experimental samples show good agreement with the experimental data. Additionally, the theoretical results provide an explanation for the observed enhancement of the photoluminescence at the heterojunctions and for the role of interfacial alloying in increasing the overlap of electron and hole wave functions at the interface. These observations reveal the localized character of the optical effects at heterojunctions of lateral TMD-based heterostructures under high excitation densities. |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| Relation: | https://figshare.com/articles/journal_contribution/Enhanced_Light_Emission_in_MoSe_sub_2_sub_WSe_sub_2_sub_Lateral_Heterostructures_in_the_Electron_Hole_Plasma_Regime/29827683 |
| DOI: | 10.1021/acs.jpclett.5c02100.s001 |
| Availability: | https://doi.org/10.1021/acs.jpclett.5c02100.s001; https://figshare.com/articles/journal_contribution/Enhanced_Light_Emission_in_MoSe_sub_2_sub_WSe_sub_2_sub_Lateral_Heterostructures_in_the_Electron_Hole_Plasma_Regime/29827683 |
| Rights: | CC BY-NC 4.0 |
| Accession Number: | edsbas.37A0D0D1 |
| Database: | BASE |