| Title: |
Monolithic Integration of Lateral 4H-SiC MOSFET and Insulated-Gate Resistive Load with Improved Linearity and High-Temperature Stability |
| Authors: |
Sung, Cheng; Kuo, Pin-Shiuan; Hsiao, Yu-Sheng; Lin, Wei-Cheng; Elangovan, Surya; Hung, Chia-Lung; Hsiao, Yi-Kai; Kuo, Hao-Chung; Tu, Chang-Ching; Wu, Tian-Li |
| Source: |
2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ; page 553-556 |
| Publisher Information: |
IEEE |
| Publication Year: |
2025 |
| Document Type: |
conference object |
| Language: |
unknown |
| DOI: |
10.23919/ispsd62843.2025.11117969 |
| Availability: |
https://doi.org/10.23919/ispsd62843.2025.11117969; http://xplorestaging.ieee.org/ielx8/11117210/11117222/11117969.pdf?arnumber=11117969 |
| Rights: |
https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 |
| Accession Number: |
edsbas.38FC402B |
| Database: |
BASE |