| Title: |
Fabrication of Tapered and Cylindrical GaN Nanowires Using Nanosphere Lithography |
| Authors: |
Akar, Elçin; da Silva, Bruno César; Knebel, Matteo; den Hertog, Martien; Monroy, Eva |
| Contributors: |
PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS); Institut de Recherche Interdisciplinaire de Grenoble (IRIG); Direction de Recherche Fondamentale (CEA) (DRF (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA); Matériaux, Rayonnements, Structure (NEEL - MRS); Institut Néel (NEEL); Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA); ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019); European Project: 758385,ERC-2017-STG,ERC-2017-STG,e-See(2018) |
| Source: |
2024 IEEE 24th International Conference on Nanotechnology (NANO); https://hal.science/hal-04765849; 2024 IEEE 24th International Conference on Nanotechnology (NANO), Jul 2024, Gijon, Spain. pp.86-90, ⟨10.1109/NANO61778.2024.10628950⟩ |
| Publisher Information: |
CCSD; IEEE |
| Publication Year: |
2024 |
| Collection: |
Université Grenoble Alpes: HAL |
| Subject Terms: |
[PHYS]Physics [physics] |
| Subject Geographic: |
Gijon; Spain |
| Description: |
International audience ; Nanowires fabricated using the top-down method can offer high uniformity and precise morphology. However, achieving well-controlled dry and wet etching processes is essential to produce large-area uniform nanowires. It is also interesting to have control on their shape, since tapered structures can have favorable light extraction properties, whereas cylindrical shapes are preference for electronics or photodetection. This paper presents a comprehensive study on the fabrication of GaN nanowires using a top-down approach facilitated by nanosphere lithography. We focus on optimizing both dry and wet etching processes to achieve high-aspect-ratio nanowires with controlled shapes. The final wet etching step, critical for shaping the nanowires, was performed with a crystallography-selective method, resulting in nanowires with vertical m-plane facets or tapered structures, depending on the initial diameter of the spheres. This demonstrates the process's adaptability to control nanowire geometry. |
| Document Type: |
conference object |
| Language: |
English |
| Relation: |
info:eu-repo/grantAgreement//758385/EU/Single electron detection in Transmission Electron Microscopy/e-See |
| DOI: |
10.1109/NANO61778.2024.10628950 |
| Availability: |
https://hal.science/hal-04765849; https://hal.science/hal-04765849v1/document; https://hal.science/hal-04765849v1/file/ElcinAkar_IEEE_Nano_Correctedversion.pdf; https://doi.org/10.1109/NANO61778.2024.10628950 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.430C0F1F |
| Database: |
BASE |