| Title: |
Detailed band alignment of high-B-composition BGaN with GaN and AlN |
| Authors: |
AlQatari, Feras S.; Liao, Che-Hao; Aguileta Vazquez, Raul; Tang, Xiao; Lopatin, Sergei; Li, Xiaohang |
| Contributors: |
Material Science and Engineering Program; Physical Science and Engineering (PSE) Division; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division; Applied Physics; Electrical and Computer Engineering Program; Electron Microscopy; Imaging and Characterization Core Lab |
| Publisher Information: |
IOP Publishing |
| Publication Year: |
2023 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
The electronic structure of B0.097Ga0.903N was determined by examining its bandgap and valence band offset (VBO) in detail. The BGaN sample was grown using a horizontal reactor metalorganic chemical vapor deposition. For bandgap determination, three different techniques were utilized yielding similar results, which are: UV-Vis spectroscopy, Schottky photodiodes, and electron energy-loss spectroscopy. The bandgap was determined to be ~3.55 eV. For measuring the VBO, the valence edges and the core levels of Al 2s and Ga 2p were measured using x-ray photoelectron spectroscopy (XPS). The valence edges were then fitted and processed along with the core levels using the standard Kraut method for VBO determination with AlN. The BGaN/AlN alignment was found to be -1.1 ± 0.1 eV. Due to core level interference between GaN and BGaN, the Kraut method fails to provide precise VBO for this heterojunction. Therefore, a different technique is devised to analyze the measured XPS data which utilizes the alignment of the Fermi levels of the BGaN and GaN layers when in contact. Statistical analysis was used to determine the BGaN/GaN alignment with decent precision. The value was found to be -0.3 ± 0.1 eV. ; The authors acknowledge the support of the KAUST Baseline Fund under Grant No. BAS/1/1664-01-01, Competitive Research under Grant Nos. URF/1/3437-01-01 and URF/1/3771-01-01, and the GCC Research Council under Grant No. REP/1/3189-01-01. |
| Document Type: |
article in journal/newspaper |
| File Description: |
application/pdf |
| Language: |
unknown |
| ISSN: |
0022-3727; 1361-6463 |
| Relation: |
https://iopscience.iop.org/article/10.1088/1361-6463/acdbd9; AlQatari, F., Liao, C.-H., Aguileta-Vazquez, R. R., Tang, X., Lopatin, S., & Li, X. (2023). Detailed band alignment of high-B-composition BGaN with GaN and AlN. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/acdbd9; Journal of Physics D: Applied Physics; http://hdl.handle.net/10754/692462 |
| DOI: |
10.1088/1361-6463/acdbd9 |
| Availability: |
http://hdl.handle.net/10754/692462; https://doi.org/10.1088/1361-6463/acdbd9 |
| Rights: |
Archived with thanks to Journal of Physics D: Applied Physics under a Creative Commons license, details at: https://creativecommons.org/licenses/by/4.0/ ; 2024-06-06 ; https://creativecommons.org/licenses/by/4.0/ |
| Accession Number: |
edsbas.4650FD0F |
| Database: |
BASE |