| Title: |
Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface |
| Authors: |
Hamilton, JJ; Cowern, NEB; Sharp, JA; Kirkby, KJ; Collart, EJH; Colombeau, B; Bersani, M; Giubertoni, D; Parisini, A |
| Publisher Information: |
AMER INST PHYSICS |
| Publication Year: |
2006 |
| Collection: |
University of Surrey, Guildford: Surrey Scholarship Online. |
| Document Type: |
article in journal/newspaper |
| File Description: |
text |
| Language: |
English |
| Relation: |
http://epubs.surrey.ac.uk/773411/; http://dx.doi.org/10.1063/1.2240257; http://epubs.surrey.ac.uk/773411/1/fulltext.pdf; http://epubs.surrey.ac.uk/773411/2/SRI_deposit_agreement.pdf; Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0. |
| DOI: |
10.1063/1.2240257 |
| Availability: |
http://epubs.surrey.ac.uk/773411/1/fulltext.pdf; http://epubs.surrey.ac.uk/773411/2/SRI_deposit_agreement.pdf; https://doi.org/10.1063/1.2240257 |
| Rights: |
attached |
| Accession Number: |
edsbas.46DBC66A |
| Database: |
BASE |