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Domain growth in polycrystalline graphene

Title: Domain growth in polycrystalline graphene
Authors: Liu, Zihua; Panja, Deb; Barkema, Gerard; Sub Simulation of Complex Systems; Simulation of Complex Systems
Publication Year: 2023
Subject Terms: Monte Carlo dynamics; disordered materials; domain growth; grain boundary; polycrystalline graphene; General Chemical Engineering; General Materials Science
Description: Graphene is a two-dimensional carbon allotrope which exhibits exceptional properties, making it highly suitable for a wide range of applications. Practical graphene fabrication often yields a polycrystalline structure with many inherent defects, which significantly influence its performance. In this study, we utilize a Monte Carlo approach based on the optimized Wooten, Winer and Weaire (WWW) algorithm to simulate the crystalline domain coarsening process of polycrystalline graphene. Our sample configurations show excellent agreement with experimental data. We conduct statistical analyses of the bond and angle distribution, temporal evolution of the defect distribution, and spatial correlation of the lattice orientation that follows a stretched exponential distribution. Furthermore, we thoroughly investigate the diffusion behavior of defects and find that the changes in domain size follow a power-law distribution. We briefly discuss the possible connections of these results to (and differences from) domain growth processes in other statistical models, such as the Ising dynamics. We also examine the impact of buckling of polycrystalline graphene on the crystallization rate under substrate effects. Our findings may offer valuable guidance and insights for both theoretical investigations and experimental advancements.
Document Type: article in journal/newspaper
File Description: application/pdf
Language: English
ISSN: 2079-4991
Relation: https://dspace.library.uu.nl/handle/1874/434985
Availability: https://dspace.library.uu.nl/handle/1874/434985
Rights: info:eu-repo/semantics/OpenAccess
Accession Number: edsbas.46E9C4ED
Database: BASE