| Title: |
Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz |
| Authors: |
Piotrowicz, Stéphane; Patard, O.; Gamarra, P.; Potier, Clément; Chartier, E.; Dua, C.; Jacquet, J.C.; Lacam, M.; Michel, N.; Nallatamby, Jean-Christophe; Ouali, M.; Altuntas, P.; Prigent, Michel; Delage, Sylvain |
| Contributors: |
Alcatel-Thales III-V Lab (III-V Lab); THALES France; Alcatel-Thalès III-V lab (III-V Lab); THALES France -ALCATEL; Systèmes RF (XLIM-SRF); XLIM (XLIM); Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Source: |
21èmes Journées Nationales Micro-Ondes; https://hal.science/hal-02460542; 21èmes Journées Nationales Micro-Ondes, May 2019, –Caen, France |
| Publisher Information: |
CCSD |
| Publication Year: |
2019 |
| Collection: |
Université de Limoges: HAL |
| Subject Terms: |
[SPI]Engineering Sciences [physics]; [SPI.TRON]Engineering Sciences [physics]/Electronics |
| Subject Geographic: |
–Caen; France |
| Description: |
International audience |
| Document Type: |
conference object |
| Language: |
French |
| Availability: |
https://hal.science/hal-02460542 |
| Accession Number: |
edsbas.4BE378AE |
| Database: |
BASE |