| Title: |
Bromine/methanol wet chemical etching of via holes for InP microwave devices |
| Authors: |
Trassaert, S.; Boudart, B.; Piotrowicz, Stephane; Crosnier, Y. |
| Contributors: |
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Source: |
ISSN: 0734-211X. |
| Publisher Information: |
CCSD; American Vacuum Society (AVS) |
| Publication Year: |
1998 |
| Collection: |
Université Polytechnique Hauts-de-France: HAL |
| Subject Terms: |
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Description: |
International audience ; We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit. Measurements have been performed from 50 MHz to 30 GHz. They exhibit losses of 0.1 dB at 30 GHz. The via hole equivalent circuit is found to be a resistance and an inductance in serial configuration with typical values of 0.4 Ω and 26 pH, respectively. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1116/1.589863 |
| Availability: |
https://hal.science/hal-01644706; https://hal.science/hal-01644706v1/document; https://hal.science/hal-01644706v1/file/JVSTB%201998%20bis.pdf; https://doi.org/10.1116/1.589863 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.4FA3690D |
| Database: |
BASE |