| Title: |
The growth of small diameter silicon nanowires to nanotrees |
| Authors: |
Gentile, P.; David, T.; Dhalluin, F.; Buttard, D.; Pauc, N.; den Hertog, M.; Ferret, P.; Baron, T. |
| Contributors: |
Laboratoire des technologies de la microélectronique (LTM); Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS); Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI); Direction de Recherche Technologique (CEA) (DRT (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Source: |
ISSN: 0957-4484. |
| Publisher Information: |
CCSD; Institute of Physics |
| Publication Year: |
2008 |
| Collection: |
Université Grenoble Alpes: HAL |
| Subject Terms: |
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] |
| Description: |
International audience ; In this work we have studied a way to control the growth of small diameter silicon nanowires by the Vapour Liquid Solid (VLS) mode. We have developed a method to deposit colloids with good density control, which is a key point for the control of the nanowires (NWs) diameter. We also show the high dependence of the allowed growth diameter with growth conditions opening the door to the realization of as grown 2 nm silicon NWs. Finally we developed a smart way to realise nanotrees in the same run, by tuning the growth conditions and making benefit of gold on the sidewall of nanowires, without two catalyst deposition steps. 1 Introduction The growth of semiconducting nanowires is now of a great interest for nanoelectronics, biosensors, and solar cells technology, due to their particular electrical and optical properties arising from their one dimensional geometry [1]. In particular, small diameter (d) silicon nanowires (SiNWs) and nanotrees (SiNTs) are viewed as attracting building blocks for future devices operating in the quantum limit predicted for d |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1088/0957-4484/19/12/125608 |
| Availability: |
https://hal.science/hal-00394785; https://hal.science/hal-00394785v1/document; https://hal.science/hal-00394785v1/file/proof%20%282%29.pdf; https://doi.org/10.1088/0957-4484/19/12/125608 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.662222A8 |
| Database: |
BASE |