| Title: |
Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions |
| Authors: |
Chien, ND |
| Contributors: |
科技學院:電機工程學系; Shih, CH (Shih, Chun-Hsing); Chien, ND ( Nguyen Dang Chien) |
| Publisher Information: |
AMER INST PHYSICS |
| Publication Year: |
2013 |
| Collection: |
National Chi Nan University (NCNU) Repository |
| Subject Terms: |
IMPACT; FET; GE; PERFORMANCE; TFETS; LAYER |
| Description: |
Using graded silicon-germanium heterojunctions, the green tunnel field-effect transistor (TFET) can be scaled down into sub-10 nm regimes without short-channel effects. This work elucidates numerically the physical operation and device design of extremely short-channel TFETs with graded silicon-germanium heterojunctions for future low-power and high-performance applications. Critical device factors, such as the drain profile and bandgap engineering, were examined to generate favorable characteristics in the on-current, on-off switching, and off-leakage of very short TFETs. A mildly doped drain with a pure Ge source is preferred in designing the graded TFETs to optimize a desirable green transistor for low-power integrated circuits. (C) 2013 American Institute of Physics. [http://dx.doi.org.ezproxy.lib.ncu.edu.tw/10.1063/1.4795777] ; SCI |
| Document Type: |
article in journal/newspaper |
| File Description: |
99 bytes; text/html |
| Language: |
English |
| Relation: |
JOURNAL OF APPLIED PHYSICS,113(13): - .7-Apr.2013; http://ir.ncnu.edu.tw:8080/handle/310010000/13186; http://ir.ncnu.edu.tw:8080/bitstream/310010000/13186/1/index.html |
| Availability: |
http://ir.ncnu.edu.tw:8080/handle/310010000/13186; http://ir.ncnu.edu.tw:8080/bitstream/310010000/13186/1/index.html |
| Accession Number: |
edsbas.668B217A |
| Database: |
BASE |