Comprehensive Impact Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs
| Title: | Comprehensive Impact Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs |
|---|---|
| Authors: | Schnitzler, Ruben; Fink, Tobias; Koch, Dominik; Weiser, Mathias C. J.; Kallfass, Ingmar |
| Contributors: | ARCHIMEDES, through the Chips Joint Undertaking and its members, including the Top-Up; National Authorities; German Federal Ministry of Education and Research; Trusted lifetime in Operation for a Circular Economy |
| Source: | IEEE Transactions on Electron Devices ; page 1-9 ; ISSN 0018-9383 1557-9646 |
| Publisher Information: | Institute of Electrical and Electronics Engineers (IEEE) |
| Publication Year: | 2026 |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| DOI: | 10.1109/ted.2026.3669878 |
| Availability: | https://doi.org/10.1109/ted.2026.3669878; http://xplorestaging.ieee.org/ielx8/16/4358746/11430609.pdf?arnumber=11430609 |
| Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
| Accession Number: | edsbas.69092BAD |
| Database: | BASE |