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Selective electroless copper deposition by using photolithographic polymer/Ag nanocomposite

Title: Selective electroless copper deposition by using photolithographic polymer/Ag nanocomposite
Authors: Assel Ryspayeva; Thomas DA Jones; Mohammadreza Nekouie Esfahani; Matthew P Shuttleworth; Russell A Harris; Robert W Kay; Marc PY Desmulliez; Jose Marques Hueso
Source: Assel Ryspayeva Thomas DA Jones Mohammadreza Nekouie Esfahani Matthew P Shuttleworth Russell A Harris Robert W Kay Marc PY Desmulliez Jose Marques Hueso 2019 Selective electroless copper deposition by using photolithographic polymer/Ag nanocomposite IEEE Transactions on Electron Devices 66 4 1843 1848
Publication Year: 2025
Collection: Universitat de València: Roderic - Repositorio de contenido libre
Subject Terms: física
Description: This paper presents a novel, direct, selective, vacuum-free, and low-cost method of electroless copper deposition, allowing additive patterning of nonconductive surfaces. Ag nanoparticles (NPs) synthesized inside a photosensitive polymer are acting as seeds for electroless copper deposition. The resulting copper film surface morphology was studied with scanning electron microscopy. Copper films were shown to display a rough grain like structure, covering substrate uniformly with good metal-substrate adhesion. Copper thickness was studied as a function of the plating time, temperature, and Ag NPs seed concentration. A maximal copper thickness of 0.44 ± 0.05 μm was achieved when plated at 30 °C with 0.4 M Ag(I). The minimum feature resolution of copper patterns, grown with 0.025- and 0.1-M silver salt, is attained down to 10 μm. The maximum electrical conductivity of the copper film prepared with 0.025-, 0.1-, and 0.4-M Ag(I) approaches (0.8 ± 0.1) × 107 S/m, (1.1 ± 0.1) ×107 S/m and (1.6 ± 0.4)×107 S/m, respectively. Electroless copper interconnections and LED circuit on glass substrate were fabricated as a proof of concept demonstrators.
Document Type: article in journal/newspaper
File Description: application/pdf
Language: English
Relation: IEEE Transactions on Electron Devices, 2019, vol. 66, num. 4, p. 1843-1848; https://hdl.handle.net/10550/106292; 170142
DOI: 10.1109/TED.2019.2897258
Availability: https://hdl.handle.net/10550/106292; https://doi.org/10.1109/TED.2019.2897258
Rights: open access
Accession Number: edsbas.6BC5ED64
Database: BASE