| Title: |
3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes |
| Authors: |
Torralba, Encarnación; Halbwax, Mathieu; El Assimi, Taha; Fouchier, Marin; Magnin, Vincent; Harari, Joseph; Vilcot, Jean-Pierre; Le Gall, Sylvain; Lachaume, Raphaël; Cachet-Vivier, Christine; Bastide, Stéphane |
| Contributors: |
Institut de Chimie et des Matériaux Paris-Est (ICMPE); Institut de Chimie - CNRS Chimie (INC-CNRS)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS); Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Laboratoire Génie électrique et électronique de Paris (GeePs); Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS); ANR-14-CE07-0005,PATTERN,Structuration de surface du silicium par un procédé de gravure par contact utilisant des électrodes métalliques(2014) |
| Source: |
ISSN: 1388-2481 ; Electrochemistry Communications ; https://hal.science/hal-01480682 ; Electrochemistry Communications, 2017, 76, pp.79-82. ⟨10.1016/j.elecom.2017.01.014⟩. |
| Publisher Information: |
CCSD; Elsevier |
| Publication Year: |
2017 |
| Subject Terms: |
Silicon; Nanoporous gold; Microstructure; Imprinting; MACE; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; [CHIM.OTHE]Chemical Sciences/Other |
| Description: |
International audience ; A novel strategy to achieve 3D pattern transfer into silicon in a single step without using lithography is presented. Etching is performed electrochemically in HF media by contacting silicon with a positively biased, patterned, metal electrode. Dissolution is localized at the Si/metal contacts and patterning is obtained as the electrode digs into the substrate. Previous attempts at imprinting Si using bulk metal electrodes have been limited by electrolyte blockage. Here, the problem is solved by using, for the first time, a nanoporous metal electrode that allows the electrolyte to access the entire Si/metal interface, irrespective of the electrode dimensions. As a proof of concept, imprinting of well-defined arrays of inverted pyramids has been performed with sub-micrometer spatial resolution over 1 mm2 using a nanoporous gold electrode of the complementary shape. Under a polarization of + 0.3 V/SME in 5 M HF, the etch rate is ~ 0.5 μm min− 1. The pyramidal pattern is imprinted independently of the Si crystallographic orientation. This maskless imprinting technique opens new opportunities in the fabrication of Si microstructures. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1016/j.elecom.2017.01.014 |
| Availability: |
https://hal.science/hal-01480682; https://hal.science/hal-01480682v1/document; https://hal.science/hal-01480682v1/file/1-s2.0-S1388248117300231-main.pdf; https://doi.org/10.1016/j.elecom.2017.01.014 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.6C5B47B0 |
| Database: |
BASE |