Katalog Plus
Bibliothek der Frankfurt UAS
Bald neuer Katalog: sichern Sie sich schon vorab Ihre persönlichen Merklisten im Nutzerkonto: Anleitung.
Dieses Ergebnis aus BASE kann Gästen nicht angezeigt werden.  Login für vollen Zugriff.

Charge Carrier Transport and Localized States in Graphite-like Amorphous Carbon Films at Room Temperatures

Title: Charge Carrier Transport and Localized States in Graphite-like Amorphous Carbon Films at Room Temperatures
Authors: Vyacheslav A. Moshnikov; Ekaterina N. Muratova; Igor A. Vrublevsky; Alexandr I. Maximov; Viktor B. Bessonov; Stepan E. Parfenovich; Alexandr K. Tuchkovsky; Dmitry A. Kozodaev
Source: Materials ; Volume 18 ; Issue 17 ; Pages: 3977
Publisher Information: Multidisciplinary Digital Publishing Institute
Publication Year: 2025
Collection: MDPI Open Access Publishing
Subject Terms: photovoltaic cell; graphite-like amorphous carbon; transport layer; Raman spectra; I–V characteristic; hopping electrotransport mechanism
Description: The conductivity of direct and alternating current for graphite-like amorphous carbon films after annealing in vacuum at a temperature of 700 °C was studied. The I–V characteristics of such films are symmetrical. The I–V curve in logarithmic coordinates demonstrated the presence of two linear sections. A study of the frequency dependences of structures with a thin graphite-like amorphous carbon film showed a sharp increase in capacitance at low frequencies and a decrease in the high-frequency region. The increase in capacitance in the low-frequency region is explained by the Maxwell–Wagner polarization, which is observed in inhomogeneous dielectrics with conducting inclusions. The results of temperature measurements of resistance showed that at room temperatures, there is a mechanism of conduction of electrons with a variable jump length along localized states lying in a narrow energy band near the Fermi level. At the same time, with an increase in the injection current, an additional mechanism of hopping electrical transport with a variable jump length along localized states in the tail of the valence band arises, which leads to an increase in the conductivity of the films.
Document Type: text
File Description: application/pdf
Language: English
Relation: Advanced Nanomaterials and Nanotechnology; https://dx.doi.org/10.3390/ma18173977
DOI: 10.3390/ma18173977
Availability: https://doi.org/10.3390/ma18173977
Rights: https://creativecommons.org/licenses/by/4.0/
Accession Number: edsbas.71493669
Database: BASE