| Title: |
Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector |
| Authors: |
Arounassalame, Vignesh; Bouschet, Maxime; Alchaar, Rodolphe; Ramiandrasoa, A.; Bernhardt, Sylvie; Bataillon, Clara; Perez, Jean-Philippe; Christol, Philippe; Ribet-Mohamed, Isabelle |
| Contributors: |
DOTA, ONERA, Université Paris Saclay Palaiseau; ONERA-Université Paris-Saclay; Institut d’Electronique et des Systèmes (IES); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Composants à Nanostructure pour le moyen infrarouge (NANOMIR); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); LYNRED (Veurey-Voroize); Photonique et Ondes (PO); Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Matériaux (MAT) |
| Source: |
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV ; SPIE Security + Defence ; https://hal.science/hal-03469716 ; SPIE Security + Defence, Sep 2021, Madrid, Spain. pp.4, ⟨10.1117/12.2598159⟩ |
| Publisher Information: |
CCSD; SPIE |
| Publication Year: |
2021 |
| Subject Terms: |
LONGUEUR DIFFUSION; COURANT SOMBRE; [SPI.TRON]Engineering Sciences [physics]/Electronics; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Subject Geographic: |
Spain |
| Time: |
Madrid, Spain |
| Description: |
International audience ; In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, was grown by molecular beam epitaxy (MBE) on GaSb substrate. At 150K, dark current measurements shows a device in the Shockley-Read-Hall (SRH) regime but with an absolute value comparable to the state-of-the-art. A quantum efficiency of 50% at the wavelength of 3 μm for a 3 μm thick absorption layer is found in simple pass configuration and front-side illumination. Combined with lifetime measurements performed on dedicated samples through time resolved photoluminescence (TRPL) technique, mobility is extracted from these measurements by using a theoretical calculation of the quantum efficiency thanks to Hovel's equations. Such an approach helps us to better understand the hole minority carrier transport in Ga-free T2SL MWIR XBn detector and therefore to improve its performance. |
| Document Type: |
conference object |
| Language: |
English |
| DOI: |
10.1117/12.2598159 |
| Availability: |
https://hal.science/hal-03469716; https://hal.science/hal-03469716v1/document; https://hal.science/hal-03469716v1/file/DOTA22072.pdf; https://doi.org/10.1117/12.2598159 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.72FC8B45 |
| Database: |
BASE |