OX Oxide
| Title: | OX Oxide |
|---|---|
| Authors: | P. F. Lu; J. Ji; C. T. Chuang; L. F. Wagner; C. M. Hsieh; J. B. Kuang; L. Hsu; M. M. Pelella; S. Chu; C. J. Anderson; I. Introduction |
| Contributors: | The Pennsylvania State University CiteSeerX Archives |
| Source: | http://www.cs.york.ac.uk/rts/docs/SIGDA-Compendium-1994-2004/papers/1996/islped96/pdffiles/06_3.pdf. |
| Collection: | CiteSeerX |
| Description: | This paper presents a detailed study on the impact of oating body in partially-depleted (PD) SOI MOS-FET on various digital VLSI CMOS circuit families. The parasitic bipolar e ect resulting from the oating body is shown to degrade the circuit noise margin and stability in general. In certain dynamic circuits and wide multiplexers, the parasitic bipolar e ect is shown to cause logic state error if not properly accounted for. |
| Document Type: | text |
| File Description: | application/pdf |
| Language: | English |
| Relation: | http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.386.5212 |
| Availability: | http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.386.5212; http://www.cs.york.ac.uk/rts/docs/SIGDA-Compendium-1994-2004/papers/1996/islped96/pdffiles/06_3.pdf |
| Rights: | Metadata may be used without restrictions as long as the oai identifier remains attached to it. |
| Accession Number: | edsbas.732364E |
| Database: | BASE |