Katalog Plus
Bibliothek der Frankfurt UAS
Bald neuer Katalog: sichern Sie sich schon vorab Ihre persönlichen Merklisten im Nutzerkonto: Anleitung.
Dieses Ergebnis aus BASE kann Gästen nicht angezeigt werden.  Login für vollen Zugriff.

II-VI Semiconductor Heterostructures: Pointers to Appropriate Analysis Techniques

Title: II-VI Semiconductor Heterostructures: Pointers to Appropriate Analysis Techniques
Authors: Bithell, Erica G.
Source: MRS Proceedings ; volume 216 ; ISSN 0272-9172 1946-4274
Publisher Information: Springer Science and Business Media LLC
Publication Year: 1990
Description: Approximate methods are used, for a variety of II–VI semiconductor alloys, to estimate the sensitivity to composition change of quantitative transmission electron microscopy techniques which have proved successful in characterising III–V heterostructures. It is shown that bright field thickness fringe matching at the [001] axis is likely to prove relatively more successful than 200 dark field intensity measurement for many alloy systems. It is also noted that alternative methods would be necessary if quantitative characterisation of (Mn,Zn) compounds were required.
Document Type: article in journal/newspaper
Language: English
DOI: 10.1557/proc-216-433
Availability: http://dx.doi.org/10.1557/proc-216-433; https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400498702
Rights: https://www.cambridge.org/core/terms
Accession Number: edsbas.745D1CD3
Database: BASE