Katalog Plus
Bibliothek der Frankfurt UAS
Bald neuer Katalog: sichern Sie sich schon vorab Ihre persönlichen Merklisten im Nutzerkonto: Anleitung.
Dieses Ergebnis aus BASE kann Gästen nicht angezeigt werden.  Login für vollen Zugriff.

Radically Tunable n‑Type Organic Semiconductor via Polymorph Control

Title: Radically Tunable n‑Type Organic Semiconductor via Polymorph Control
Authors: Daniel William Davies (10326699); Sang Kyu Park (1295829); Prapti Kafle (4975934); Hyunjoong Chung (5462690); Dafei Yuan (1748653); Joseph W. Strzalka (1317135); Stefan C. B. Mannsfeld (7209257); SuYin Grass Wang (4866976); Yu-Sheng Chen (1341372); Danielle L. Gray (1532983); Xiaozhang Zhu (1363347); Ying Diao (191325)
Publication Year: 2021
Collection: Smithsonian Institution: Digital Repository
Subject Terms: Medicine; Environmental Sciences not elsewhere classified; Biological Sciences not elsewhere classified; Chemical Sciences not elsewhere classified; Physical Sciences not elsewhere classified; Information Systems not elsewhere classified; 1.18 eV; electron mobility; Polymorph Control Polymorphism; band gap; p-type counterparts; 5 polymorphs; quinoidal molecules; design consideration; OSC; n-type semiconductors; Grazing incidence X-ray diffraction; intensity differences; 5 orders; 1.40 eV; polymorphic transitions
Description: Polymorphism has emerged as an important design consideration in organic semiconductors (OSCs). Previously, in many OSCs, even small changes in molecular stacking can cause drastic changes to the optical and electronic properties. However, investigation into n-type semiconductors has significantly lagged behind their p-type counterparts. In this work, we present the prolific polymorphism of 2-dimensional quinoidal terthiophene (2DQTT-o-B) and systematically investigate each of 5 polymorphs, 3 of which have been previously unreported. Grazing incidence X-ray diffraction provided a key method to understanding the structure of each polymorph. Via the polymorphic transitions mapped, we tuned the electron mobility by 5 orders of magnitude, from 5.63 × 10 –5 to 0.22 cm 2 V −1 s –1 . These were accompanied by modifications to the optical properties, namely we observed substantial differences in the refractive index noted by intensity differences under polarized optical microscopy and a large shift in optical band gap from 1.18 eV up to 1.40 eV. Finally, we suggest that changes to these properties may be related to the unique quinoidal to aromatic transition observed in quinoidal molecules.
Document Type: article in journal/newspaper
Language: unknown
Relation: https://figshare.com/articles/journal_contribution/Radically_Tunable_n_Type_Organic_Semiconductor_via_Polymorph_Control/14241861
DOI: 10.1021/acs.chemmater.0c04678.s003
Availability: https://doi.org/10.1021/acs.chemmater.0c04678.s003
Rights: CC BY-NC 4.0
Accession Number: edsbas.77E50053
Database: BASE