| Title: |
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing |
| Authors: |
Sharp JA; Smith AJ; Webb RP; Kirkby KJ; Cowern NEB; Giubertoni D; Gennaro S; Bersani M; Foad MA; Fazzini PF; Cristiano F |
| Source: |
Applied Physics Letters, 2008 |
| Publisher Information: |
American Institute of Physics |
| Publication Year: |
2008 |
| Collection: |
Newcastle University Library ePrints Service |
| Description: |
The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of ∼600 sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively. © 2008 American Institute of Physics. |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| Relation: |
https://eprints.ncl.ac.uk/77053 |
| Availability: |
https://eprints.ncl.ac.uk/77053 |
| Accession Number: |
edsbas.77F0105C |
| Database: |
BASE |