| Title: |
Free Standing Stress Amplification Structure for Ultrasensitive 3C-SiC/Si Pressure Sensor |
| Authors: |
Tong, B; Nguyen, HQ; Nguyen, TH; Nguyen, TK; Nguyen, VT; Dinh, T; Vu, TH; Dau, VT; Dao, DV |
| Publisher Information: |
IEEE |
| Publication Year: |
2022 |
| Collection: |
Griffith University: Griffith Research Online |
| Subject Terms: |
Nanotechnology; Nanomaterials; Electronics; sensors and digital hardware; Materials engineering |
| Subject Geographic: |
Dallas; USA |
| Time: |
2022-10-30 to 2022-11-02 |
| Description: |
This paper presents an innovative stress amplification approach for enhancing the sensitivity of piezoresistive pressure sensors. The structure consists of two pillars raised from the membrane supporting a released 3C-SiC micro-beam which acts as the sensing element. The proposed design was demonstrated using a 3C-SiC/Si heterostructure. Experimental results found our device highly sensitive, with a high sensitivity of 0.1328 kPa-1. The sensitivity improvement was attributed to the stress-amplification phenomenon observed in our free-standing structure. Analytical and numerical methods confirmed that our device increases the stress/sensitivity by 750% over a traditional membrane structure. ; No Full Text |
| Document Type: |
conference object |
| Language: |
unknown |
| ISBN: |
978-1-66548-464-0; 1-66548-464-0 |
| Relation: |
Proceedings of 2022 IEEE Sensors; 2022 IEEE Sensors; Tong, B; Nguyen, HQ; Nguyen, TH; Nguyen, TK; Nguyen, VT; Dinh, T; Vu, TH; Dau, VT; Dao, DV, Free Standing Stress Amplification Structure for Ultrasensitive 3C-SiC/Si Pressure Sensor, Proceedings of 2022 IEEE Sensors, 2022; https://hdl.handle.net/10072/420518 |
| DOI: |
10.1109/SENSORS52175.2022.9967353 |
| Availability: |
https://hdl.handle.net/10072/420518; https://doi.org/10.1109/SENSORS52175.2022.9967353 |
| Rights: |
open access |
| Accession Number: |
edsbas.847C81C2 |
| Database: |
BASE |