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Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si 3 N 4 and SiO 2

Title: Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si 3 N 4 and SiO 2
Authors: Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J
Contributors: National Science Foundation; Semiconductor Research Corporation; Intel Corporation
Source: Journal of Physics: Condensed Matter ; volume 28, issue 9, page 094014 ; ISSN 0953-8984 1361-648X
Publisher Information: IOP Publishing
Publication Year: 2016
Document Type: article in journal/newspaper
Language: unknown
DOI: 10.1088/0953-8984/28/9/094014
Availability: https://doi.org/10.1088/0953-8984/28/9/094014; http://stacks.iop.org/0953-8984/28/i=9/a=094014/pdf; http://stacks.iop.org/0953-8984/28/i=9/a=094014?key=crossref.27893babc7aeb28fa1b12ecd1f303ec1; http://stacks.iop.org/0953-8984/28/i=9/a=094014/ampdf
Rights: http://iopscience.iop.org/info/page/text-and-data-mining ; http://iopscience.iop.org/page/copyright ; http://creativecommons.org/licenses/by-nc-nd/3.0
Accession Number: edsbas.84F5AAC3
Database: BASE