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Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device

Title: Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device
Authors: Brackmann, Varvara; Neul, Malte; Friedrich, Michael; Langheinrich, Wolfram; Simon, Maik; Muster, Pascal; Pregl, Sebastian; Demmler, Arne; Hanisch, Norbert; Lederer, Maximilian; Zimmermann, Katrin; Klos, Jan; Reichmann, Felix; Yamamoto, Yuji; Wislicenus, Marcus; Dahl, Claus; Schreiber, Lars R.; Bluhm, Hendrik; Lilienthal-Uhlig, Benjamin
Publication Year: 2023
Collection: Publikationsdatenbank der Fraunhofer-Gesellschaft
Subject Terms: Lithographie; CMOS; Quantencomputer; Quantencomputing; Industrietechnik; DDC::600 Technik; Medizin; angewandte Wissenschaften::620 Ingenieurwissenschaften
Description: Universal quantum computers promise the possibility of solving certain computational problems significantly faster than classically possible. For relevant problems, millions of qubits are needed, which is only feasible with industrial production methods. This study presents an electron beam patterning process of gate electrodes for Si/SiGe electron spin qubits, which is compatible with modern CMOS semiconductor manufacturing. Using a pCAR e-beam resist, a process window is determined in which structure sizes of 50 nm line and 30 nm space can be reproducibly fabricated with reasonable throughput. Based on electrostatic simulations, we implemented a feedback loop to investigate the functionality of the gate electrode geometry under fabrication-induced variations.
Document Type: conference object
Language: English
ISBN: 978-1-5106-6860-7; 1-5106-6860-8
Relation: European Mask and Lithography Conference 2023; #PLACEHOLDER_PARENT_METADATA_VALUE#; 38th European Mask and Lithography Conference, EMLC 2023; Halbleiter-Quantenprozessor mit shuttlingbasierter skalierbarer Architektur; https://publica.fraunhofer.de/handle/publica/452218
DOI: 10.1117/12.2675943
Availability: https://publica.fraunhofer.de/handle/publica/452218; https://doi.org/10.1117/12.2675943
Accession Number: edsbas.8B803884
Database: BASE