| Title: |
Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits |
| Authors: |
Wan, Hsien-Wen; Cheng, Yi-Ting; Cheng, Chao-Kai; Chia, Jui-Min; Wu, Chien-Ting; Yeh, Sheng-Shiuan; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei |
| Publication Year: |
2026 |
| Collection: |
ArXiv.org (Cornell University Library) |
| Subject Terms: |
Quantum Physics; Materials Science; Superconductivity |
| Description: |
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendellösung fringes, and $θ$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $Σ$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits. ; 19 pages, 4 figures, 1 table |
| Document Type: |
text |
| Language: |
unknown |
| Relation: |
http://arxiv.org/abs/2602.17249 |
| Availability: |
http://arxiv.org/abs/2602.17249 |
| Accession Number: |
edsbas.8D42DD9E |
| Database: |
BASE |