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Investigation of ph effect on the performance of undoped silicon carbide nanowire field-effect transistors for the development of chemical sensors and biosensors

Title: Investigation of ph effect on the performance of undoped silicon carbide nanowire field-effect transistors for the development of chemical sensors and biosensors
Authors: TEKER, KAŞİF
Contributors: Mousa H., Awais M., TEKER K.
Publication Year: 2022
Subject Terms: Bilgi Sistemleri; Haberleşme ve Kontrol Mühendisliği; Sinyal İşleme; Fizik; Temel Bilimler; Mühendislik ve Teknoloji; Information Systems; Communication and Control Engineering; Signal Processing; Physics; Natural Sciences; Engineering and Technology; MÜHENDİSLİK; ELEKTRİK VE ELEKTRONİK; Mühendislik; Bilişim ve Teknoloji (ENG); MALZEME BİLİMİ; ÇOKDİSİPLİNLİ; Malzeme Bilimi; FİZİK; UYGULAMALI; Temel Bilimler (SCI); ENGINEERING; ELECTRICAL & ELECTRONIC; Computing & Technology (ENG); MATERIALS SCIENCE; MULTIDISCIPLINARY; APPLIED; Natural Sciences (SCI); Metals and Alloys
Description: The effect of pH on the performance of undoped silicon carbide nanowire field-effect transistors (SiCNW-FETs) was systematically studied using various solutions with pH ranging from pH 2 to pH 13 and important transport parameters such as transconductance, mobility, and resistivity were reported. Interestingly, at 2 V, alkaline solutions with high pH value (pH 13) revealed a higher transconductance of 7.13 nS and lower resistivity of 40 omega cm as compared to acidic solutions with 0.01 nS and 2.1x10(4) omega cm at pH 2, respectively. A model describing the pH-dependent conductance of the SiCNW-FETs was proposed. Moreover, a comprehensive comparison of the pH effects on the transport properties of the undoped SiCNW-FETs and nitrogen-doped SiCNW-FET was presented and the measurements clearly revealed opposite trends for a wide range of pH solutions. In short, our SiCNW-FETs with high sensitivity, high stability, and minuscule sample volume can provide solutions for the development of harsh environment compatible nanosensors for chemical, biochemical, and environmental sensing applications.
Document Type: article in journal/newspaper
File Description: application/pdf
Language: English
Relation: JOURNAL OF ELECTRONIC MATERIALS; https://hdl.handle.net/11424/287125; 51; 2062; 2069
DOI: 10.1007/s11664-022-09468-z
Availability: https://hdl.handle.net/11424/287125; https://www.scopus.com/record/display.uri?eid=2-s2.0-85124351538&origin=resultslist&sort=plf-f&src=s&sid=c7566e85b835527f9035d96a3fdcd236&sot=b&sdt=b&s=TITLE-ABS-KEY%28Investigation+of+pH+Effect+on+the+Performance+of+Undoped+Silicon+Carbide+Nanowire+Field-Effect+Transistors+for+the+Development+of+Chemical+Sensors+and+Biosensors%29&sl=110&sessionSearchId=c7566e85b835527f9035d96a3fdcd236; https://doi.org/10.1007/s11664-022-09468-z
Rights: info:eu-repo/semantics/openAccess
Accession Number: edsbas.8D5CC0A7
Database: BASE