A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs
| Title: | A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs |
|---|---|
| Authors: | Schimizzi, Ryan D.; Trew, Robert J.; Bilbro, Griff L. |
| Source: | IEEE Transactions on Electron Devices ; volume 59, issue 11, page 2973-2978 ; ISSN 0018-9383 1557-9646 |
| Publisher Information: | Institute of Electrical and Electronics Engineers (IEEE) |
| Publication Year: | 2012 |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| DOI: | 10.1109/ted.2012.2211360 |
| Availability: | https://doi.org/10.1109/ted.2012.2211360; http://xplorestaging.ieee.org/ielx5/16/6334462/06275484.pdf?arnumber=6275484 |
| Rights: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| Accession Number: | edsbas.8E352A6D |
| Database: | BASE |