| Title: |
Transport properties and electronic phase transitions in two-dimensional tellurium at high pressure |
| Authors: |
Zou, Boyu; Wang, Shu; Wang, Qinglin; Wang, Guangyu; Zhang, Guozhao; Jiang, Jialiang; Cui, Jie; He, Jiarui; Xi, Hongzhu; Fu, Hailong; Wang, Zhongchang; Wang, Cong; Wang, Qiushi; Liu, Cailong |
| Contributors: |
Special Construction Project Fund for Shandong Province Taishan Scholars; National Natural Science Foundation of China; Natural Science Foundation of Shandong Province; Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province; Introduction and Cultivation Plan of Youth Innovation Talents for Universities of Shandong Province; Fundamental Research Funds for the Central Universities; Open Research Project of Zhejiang Province Key Laboratory of Quantum Technology and Device; Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province; National Key Research and Development Program of China; Guangyue Young Scholar Innovation Team of Liaocheng University |
| Source: |
Applied Physics Letters ; volume 124, issue 10 ; ISSN 0003-6951 1077-3118 |
| Publisher Information: |
AIP Publishing |
| Publication Year: |
2024 |
| Description: |
Utilizing in situ Raman spectroscopy, resistivity, and Hall-effect measurements, we conducted an extensive investigation on the continuous electronic phase transitions and transport properties of two-dimensional (2D) tellurium (Te) under high pressure at room and low temperature (80–300 K). The distinguishable decrease in the A1 Raman mode's full width at half maximum in the trigonal phase (Te-I) indicated an electronic phase transition at 2.2 GPa. The following Hall-effect experiments located the Lifshitz transition and the semiconductor-semimetal transition at 0.9 and 1.9 GPa, respectively, and the semiconductor-semimetal transition was also confirmed by resistivity variation through temperature. The charge carrier types of the Te changed from hole to electron during the phase transition from Te-I to Te-II (triclinic phase) at low temperature, while the transport parameters remained almost unchanged during the phase transition from Te-II to Te-III (monoclinic phase). The results offered complete and thorough electronic phase transitions and transport characteristics of 2D Te, hence great advancing the potential application of Te in electronic devices. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1063/5.0190275 |
| DOI: |
10.1063/5.0190275/19709235/102105_1_5.0190275.pdf |
| Availability: |
https://doi.org/10.1063/5.0190275; https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0190275/19709235/102105_1_5.0190275.pdf |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ ; https://creativecommons.org/licenses/by/4.0/ |
| Accession Number: |
edsbas.9CADBB82 |
| Database: |
BASE |