| Title: |
GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices |
| Authors: |
Hashimoto, Tadao; Letts, Edward; Key, Daryl; Jordan, Benjamin; Shang, Eric |
| Contributors: |
Razeghi, Manijeh; Lewis, Jay S.; Khodaparast, Giti A.; Tournié, Eric |
| Source: |
Quantum Sensing and Nano Electronics and Photonics XVI ; page 46 |
| Publisher Information: |
SPIE |
| Publication Year: |
2019 |
| Document Type: |
conference object |
| Language: |
unknown |
| DOI: |
10.1117/12.2506059 |
| Availability: |
https://doi.org/10.1117/12.2506059 |
| Accession Number: |
edsbas.A5CFD1DD |
| Database: |
BASE |